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inchange semiconductor product specification silicon npn power transistors 2SC2773 description ? ? with mt-200 package ? high current capability applications ? for audio power amplifier and general purpose applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 15 a i b base current 5 a p c collectorl power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (mt-200) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC2773 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 200 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =10 a;i b =1 a 3.0 v i cbo collector cut-off current v cb =200v; i e =0 100 | a i ebo emitter cut-off current v eb =6v; i c =0 100 | a h fe dc current gain i c =5a ; v ce =4v 50 180 f t transition frequency i c =0.5a ; v ce =12v 20 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 250 pf ? h fe classifications o p y 50-100 70-140 90-180
inchange semiconductor product specification 3 silicon npn power transistors 2SC2773 package outline fig.2 outline dimensions

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